Product Summary

The CM200DY-24H is a member of the dual IGBTMOD H-Series Modules. It is designed for use in switching applications. The CM150DY-24H consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

 

Parametrics

CM200DY-24H absolute maximum ratings: (1)Junction Temperature Tj: –40℃ to 150℃; (2)Storage Temperature Tstg: –40℃ to 125℃; (3)Collector-Emitter Voltage (G-E SHORT) VCES: 1200 Volts; (4)Gate-Emitter Voltage (C-E SHORT) VGES: ±20 Volts; (5)Collector Current (TC = 25℃) IC: 200 Amperes; (6)Peak Collector Current ICM: 400 Amperes; (7)Emitter Current** (TC = 25℃) IE: 200 Amperes; (8)Peak Emitter Current IEM: 400 Amperes; (9)Maximum Collector Dissipation (TC = 25℃) Pc: 1500 Watts.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CM200DY-24H
CM200DY-24H

IGBT MOD DUAL 1200V 200A H SER
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CM200DY-24H
CM200DY-24H

IGBT MOD DUAL 1200V 200A H SER
Data Sheet
Negotiable 
CM201212-47NKL
CM201212-47NKL
Bourns
RF Inductors CHIP INDUCTOR SMT 47uH
Data Sheet
0-1: $0.28
1-10: $0.24
10-50: $0.20
50-100: $0.17
CM201212-27NKL
CM201212-27NKL
Bourns
RF Inductors CHIP INDUCTOR SMT 27uH
Data Sheet
0-1: $0.28
1-10: $0.24
10-50: $0.20
50-100: $0.17
CM201212-56NK
CM201212-56NK
Bourns
RF Inductors .056uH 10% Wirewound
Data Sheet
Negotiable 
CM201212-27NK
CM201212-27NK
Bourns
RF Inductors .027uH 10% Wirewound
Data Sheet
Negotiable 
CM201212-10NK
CM201212-10NK
Bourns
RF Inductors .01uH 10% Wirewound
Data Sheet
Negotiable