(China (Mainland))
Product Summary
The IRF130 N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRF130 is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
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Pricing (USD) |
Quantity | ||||||||||||||||||
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 IRF130 |
Other |
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Data Sheet |
Negotiable |
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IRF1302 |
Other |
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Data Sheet |
Negotiable |
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IRF1302L |
Other |
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Data Sheet |
Negotiable |
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IRF1302PbF |
International Rectifier |
MOSFET N-CH 20V 180A TO-220AB |
Data Sheet |
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IRF1302S |
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MOSFET N-CH 20V 174A D2PAK |
Data Sheet |
Negotiable |
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IRF130SMD |
Other |
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Data Sheet |
Negotiable |
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