Product Summary
ff150r12yt3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 225A; (3)repetitive peak collector current, Ptot: 780W; (4)gate-emitter peak votlage, VGES: ±20V.
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FF150R12YT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 200A |
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FF150R12KE3_B8 |
Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
Data Sheet |
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FF150R12KE3G |
Infineon Technologies |
IGBT Modules 1200V 150A DUAL |
Data Sheet |
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FF150R12KE3G_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 225A |
Data Sheet |
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FF150R12KS4 |
Infineon Technologies |
IGBT Modules 1200V 150A DUAL |
Data Sheet |
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FF150R12KS4_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 225A |
Data Sheet |
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FF150R12KT3G |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 225A |
Data Sheet |
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