MG50Q2YS40

N channel IGBT, high input impedance, high speed, low saturation voltage, 4.0V

Rated 5 Rating 5 | reviews | Write a review

Price:: US $50.00~90.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	90.00 / Piece
100 ~ 500 :	70.00 / Piece
500 ~ 1000 :	50.00 / Piece

PartNumber:: MG50Q2YS40

Brand:: Toshiba Semiconductor - Toshiba | D/C: 10+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-03-26

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Part Number:MG50Q2YS40
US $50.00 - 90.00
MG50Q2YS40

US $31.00 - 36.00 / Piece
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GTR MODULE.IGBT MODULE.SCR MODULE.POWER MODULE.DIODE MODULE MG50Q2YS40

US $50.00 - 50.00 / Piece
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Product Summary

MG50Q2YS40 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current: DC:50A, 1ms:100A; (4)forward current: DC:50A, 1ms:100A; (5)collector power dissipation:400W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.

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